Radiant energy heating for die attach

ABSTRACT

Methods and systems for attaching a chip to a next level package by directing radiant energy at the chip back side while substantially preventing irradiation of the next level package are described.

CLAIM TO PRIORITY

This application is a divisional of prior application Ser. No.10/947,515, filed Sep. 22, 2004, now U.S. Pat. No. 7,187,066.

FIELD OF THE INVENTION

Systems for attaching dies to next level packages are described.

BACKGROUND INFORMATION

Many electronic components include dies, also known as integratedcircuit chips, attached to next level packages such as a substrates,interposers, printed circuit boards, etc. A may be attached to a nextlevel package using a flip chip or controlled collapse chip connection(C4) technique. In the C4 technique, the die is typically bonded to thenext level package with bumps or interconnects formed of solder andaluminum, copper, or other conductive materials. In this technique, thedie, interconnects and next level package are heated to form a bond, aprocess commonly known as reflowing. Heating is typically done byheating the die, next level package, and interconnects simultaneously ina reflow oven at elevated temperatures.

While this approach is effective for bonding the die to the next levelpackage, it can result in mechanical stresses in an assembly so produceddue to differing coefficients of thermal expansion between the die andthe next level package materials. If the die and the next level packagehave different coefficients of thermal expansion, they will not expandor contract to the same extent when heated or cooled through the sametemperature range in the reflow oven. After bonding, removal from thereflow oven, and cooling, the resulting assembly can thus suffer fromresidual mechanical stresses which are greater than desired. Thesestresses can lead to defects in the assembly such as cracks ininterlayer dielectric (ILD) layers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an interconnect stack.

FIG. 2 illustrates a cross section of an interconnect connection betweena die and a next level package.

FIG. 3 illustrates an implementation of a system for chip attach.

FIG. 4 illustrates an implementation of a system for multiple chipattach.

FIG. 5 is a flow chart illustrating chip attach.

FIG. 6 illustrates an implementation comprising a bond enhancingmaterial.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth.However, it is understood that implementations may be practiced withoutthese specific details. In other instances, well-known circuits,structures and techniques have not been shown in detail in order not toobscure the understanding of this description.

For the purposes of clarity, references may be made to particularmaterials. However, these references are not intended to be limiting,and implementations of the present invention are applicable to othermaterials not described herein, unless specifically mentioned otherwiseor unless one skilled in the art would know otherwise.

As used herein, “CTE” denotes coefficient of thermal expansion. Acoefficient of thermal expansion may be described in a number of ways.One description uses the unit of measure “ppm/degree C.”, meaningparts-per-million per degree Centigrade. For example, a material havinga CTE of 100 ppm/degree C., when heated through a temperature change of100 degrees Centigrade, will expand by (10,000/1,000,000), equivalent toa 1% expansion. The use of “CTE” and “ppm/degree C.” in this disclosureis simply for explanatory purposes and no limitation is implied by theuse of these terms.

As used herein, “die” or “chip” generally refers to integrated circuitdevices. Such devices are typically formed on a substrate or base layerincluding silicon, SOI, glass, germanium, indium telluride, or galliumantimonide, etc., and combinations thereof, to cite just a few examples.

As used herein, “next level package” generally refers to any type ofpackaging which can be bonded to a die. A next level package may be oneor more of: a substrate, a flexible substrate, an interposer, a printedcircuit board, etc., and combinations thereof, to cite just a fewexamples.

As used herein, radiant energy based heating includes heating usinglasers, lamps, light sources, and other sources of radiant energy.Radiant energy may be monochromatic or may comprise multiplewavelengths, including ultraviolet, visible, and infrared, and it may becoherent or incoherent. Radiant energy may be supplied continuously orin a pulse or repeated pulses and may be provided directly or throughfiber optics, waveguides, lenses, etc.

FIG. 1 illustrates a model of an interconnect stack 100. Interconnectstack 100 may be formed at a surface of a semiconductor die and may beused to bond the semiconductor die with a next level package.Interconnect stack 100 may exist partly beneath and partly above asurface of a semiconductor die.

Interconnects may be used to couple the semiconductor die with the nextlevel package in a number of ways, including electrical, mechanical, andthermal coupling. Typically, a semiconductor die will have manyinterconnects. Interconnects may be arranged, for example, in a regularpattern or an array. Interconnects may comprise aluminum andlead-containing solders. In electronic components which are largely leadfree, interconnects may comprise copper and silver-tin solder. Wheresuch interconnects are implemented in a flip-chip package, they mayresult in a connection between the semiconductor die and the next levelpackage which is less compliant than is typical of interconnectscomprising aluminum and lead-containing solder. Reduced compliance inthe connection may exacerbate stresses resulting from mismatched CTEs.

Interconnect stack 100 is illustrated with silicon layer 110, interlayerdielectric layer 120 (ILD), silicon nitride layer 130, silicon dioxidelayer 140, polyimide layer 150, metallization layer 160, copper bump170, and silver-tin solder 180. Some layers of interconnect stack 100,such as ILD 120, may be mechanically fragile and may crack underresidual stresses after a die is attached to a next level package bytypical processes, wherein a semiconductor die and a next level packageare placed in a reflow oven and brought to reflow temperature. Dieattach according to some implementations of the present invention maydiminish such stresses and may serve to reduce cracking in ILD 120 orother areas. Note, that while implementations of the methods and systemsdescribed and herein may particularly describe interconnects comprisingcopper and lead free solder, such as interconnect 100, such adescription is provided merely for the sake of clarity, and nolimitation to these particular materials or structures is implied.

FIG. 2 illustrates a model cross section 200 of an interconnectconnection between a semiconductor die 210 and a next level package 220.As illustrated by dotted lines, a difference in CTEs for semiconductordie 210 and next level package 220 can result in a difference incontraction (δ) of next level package 220 relative to semiconductor die210 when they are cooled from a first uniform temperature to a seconduniform temperature. Once semiconductor die 210 is bonded to next levelpackage 220 by an array of interconnects 230, for example an array ofsolder bumps, the difference in contraction (δ) may result in residualstresses after cooling.

Implementations of the present invention may help ameliorate thedifference in contraction (δ) and residual stresses by preferentiallyheating semiconductor die 210. In some implementations, die 210 isheated by directing radiant energy at its backside 205. This heating mayraise the temperature of die 210 and interconnects 230 to the pointwhere the interconnect 230 solder joints reflow, without bringing thetemperature of the entire next level package 220 up to that point.Because the CTE of next level package 220 is typically greater than thatof semiconductor die 210, not raising the temperature of the entire nextlevel package 220 to the solder reflow temperature may result in alessening of the expansion of next level package 220 relative tosemiconductor die 210. Thus, upon cooling to a uniform temperature suchas room temperature, the difference in contraction (δ) may be reducedrelative to that obtained by typical processes. Note, however, that thedescriptions provided herein describe particular materials andstructures simply for clarity and ease of explanation. Systems andmethods described are applicable to a wide variety of systems includingthose wherein CTEs differ from those described and those wherein nodifference in CTEs exists.

FIG. 3 depicts a system 300 for attaching a semiconductor die 210 to anext level package 220 according to an implementation of the presentinvention. Semiconductor die 210 may have interconnects 230 formedthereon to create die-interconnect combination 320. Die-interconnectcombination 320 may be arranged with next level package 220 so thatinterconnects 230 are interposed between die 210 and next level package220 and in contact with both. Other configurations of die 210,interconnects 230, and next level package 220 may likewise be treatedusing this approach. Interconnects 230 may comprise a solder alloy, ormay comprise a combination of copper and solder, and interconnects 230may be formed on next level package 220 rather than on die 210, orinterconnects 230 may be formed on both die 210 and next level package220, for example in matching arrays.

Next level package 220 may include, for example, an epoxy resin materialsuch as FR4 glass epoxy having a CTE of approximately 16 ppm/degree C.,and may contain wiring and/or circuitry. Semiconductor die 210 mayinclude, for example, silicon having a CTE of approximately 3 ppm/degreeC. Interconnects 230 may be, for example, in the form of an array ofsolder bumps disposed on front side 206 of die 210 and may comprisecopper. Those skilled in the art will appreciate that materials otherthan those described herein may be used, and implementations of thepresent invention are not limited to these materials.

Radiant energy source 310 may take a number of forms. Exemplary sourcesinclude lamps and lasers, though other sources are also suitable. Insome implementations, radiant energy source 310 may be a laser whichemits energy in the infrared spectrum. Radiant energy source 310 may bea carbon dioxide laser emitting infrared light with a wavelength ofabout 10.6 microns. In some implementations, source 310 may be a laserwhich emits energy in the ultraviolet spectrum. Radiant energy source310 may be a YAG laser emitting light with a wavelength of about 1micron. Where radiant energy source 310 is a laser, it may provide powerof about 10 to 20 watts/square centimeter or more. In someimplementations, radiant energy source 310 may be a visible lightsource. Radiant energy source 310 may be maintained stationary relativeto die 210, or may move relative to it to allow for more uniform heatingof back side 205 of die 210. Relative motion may be provided by, forexample, a movable jig holding die 210 and next level package 220, bymovable fiber optics carrying light, by electromagnetic fields, etc.

Radiant energy source 310 is arranged so as to be capable of irradiatingback side 205 of die 210. Radiant energy source 310 may be arranged soas to directly irradiate back side 205 of die 210, such as by beingpositioned directly above it. Alternatively, radiant energy source 310may be remote from die 210 and may coupled to a light pipe, fiberoptics, or other means for directing radiant energy from radiant energysource 310 to back side 205 of die 210.

In some implementations, radiant energy source 310 is directedsubstantially to back side 205 while only irradiating surface 330 ofnext level package 220 to a limited degree. In some implementations,heating back side 205 may result in die 210 being hotter than next levelpackage 220 during reflow. Radiant energy emitted from source 310 may bein the nature of a beam having a cross section of from about 15 squaremillimeters to about 2,600 square millimeters. In some implementations,radiant energy source 310 does not irradiate surface 330 of next levelpackage 220. This may be achieved, for example, by focusing radiantenergy source 310 on back side 205 of die 210, and/or by masking orshielding next level package 220. Focusing, masking, shielding, etc.,may be achieved by interposing element 340 in a path of the radiantenergy.

Element 340 may include lenses, reflectors, masks, electromagneticfields, etc., which are capable of controlling the passage of radiantenergy from source 310 to back side 205 and/or surface 330. For example,element 340 may comprise a mask which substantially blocks radiantenergy from impinging on surface 330 while allowing radiant energy toimpinge on back side 205. In some implementations, element 340 maycomprise an electromagnetic field acting as a lens.

In some implementations, the temperature of the ambient atmosphere 350of system 300 may be limited. While any suitable arrangement may beused, limits may be provided by exemplary controls such as fans,refrigeration devices, etc. Limiting the temperature of the ambientatmosphere 350 may reduce the temperature of next level package 220during bonding and may thereby reduce its expansion due to heating. Thismay assist in minimizing the difference in contraction (δ) between nextlevel package 220 and semiconductor die 210. In some implementations,the temperature of ambient atmosphere 350 may be limited to about 100degrees centigrade or lower.

FIG. 4 depicts a system 400 for attaching multiple semiconductor dies210 to next level package 220 according to an implementation of thepresent invention. Dies 210 may be attached sequentially orsimultaneously. Radiant energy source 310 may be arranged so as to becapable of irradiating one or more back sides 205 of one or more dies210. Radiant energy source 310 may be maintained stationary relative toback sides of die 210, or may move relative to them. Relative motion maybe provided by, for example, a movable jig holding die 210 and nextlevel package 220, by movable fiber optics carrying light, byelectromagnetic fields, etc. Radiant energy source 310 may emit radiantenergy continuously, in a pulsed fashion, or in any other suitablefashion.

Radiant energy emitted from source 310 may be managed by element 340,such as by blocking or redirecting the radiant energy. In someembodiments, radiant energy source 310 supplies radiant energy viaelement 340 to back sides 205 of semiconductor dies 210 while element340 controls the radiant energy so as to substantially prevent radiantenergy from impinging on surface 330 of next level package 220,including in space 410. For example, element 340 may comprise a shade orshutter which allows radiant energy to impinge on one or more back sides205 while substantially blocking radiant energy from impinging onsurface 330 of next level package 220, for example at a periphery ofnext level package 220 or in space 410 between semiconductor dies 210.

FIG. 5 is a flow chart describing an implementation of a method for dieattach. In this implementation, a source of radiant energy 310 isdirected at backside 205 of a semiconductor die 210 to heat die 210 andinterconnects 230 to the solder reflow temperature to thereby bond die210 with next level package 220. Radiant energy based heating may allowdie 210 to be preferentially heated, thereby helping to ameliorate theeffects of different CTEs of die 210 and next level package 220.

Semiconductor die 210 may be manufactured, for example, to include low-kdielectrics, copper bumps, and silver-tin solder in interconnects 230,though implementations of the present invention are not restricted todies or interconnects of those types and are applicable to a wide rangeof possible dies and interconnects. Next level package 220 may be, forexample, an organic substrate of a material such as FR4, thoughimplementations of the present invention are not restricted to nextlevel packages of this type and are applicable to a wide range ofpossible next level packages and materials including ceramic substrates,interposers, and printed circuit boards.

In Block 510 of FIG. 5, semiconductor die 210 is arranged with nextlevel package 220 such that interconnects 230 are disposed between die210 and next level package 220 and in contact with both. Interconnects230 may comprise, for example, copper bumps, solder bumps, C4 joints,etc., and methods described herein are suitable for other arrangementsas well. For example, solder bumps may be present on next level package220. Optionally, as shown in FIG. 6, a suitable bond enhancing material610 may be provided. Material 610 may comprise, for example, a chemicalsoldering flux which may be applied to some portion of surface 330 or tointerconnects 230. Optionally, material 610 may comprise a suitableno-flow underfill which may be applied to a portion of surface 330 or tointerconnects 230. Chemical flux in material 610 may have a boilingpoint near to or above the interconnect 230 solder joint reflowtemperature. In addition to other effects, a chemical flux having such aboiling point may improve heat transfer from die 210 to interconnects230 and next level package 220. Likewise, where material 610 comprises ano-flow underfill, it may improve heat transfer from die 210 tointerconnects 230 and next level package 220.

In Block 520, radiant energy source 310 provides energy to back side 205of die 210. Radiant energy source 310 provides radiant energy basedheating of semiconductor die 210. The exact nature of radiant energysource 310 will depend, in part, on the nature of die 210 and therequirements of the manufacturing process. Exemplary radiant energysources 310 include lamps and lasers, though other sources are alsosuitable. Exemplary arrangements for radiant energy source 310 includeconfigurations which allow radiant energy to directly irradiatesemiconductor die 210 as well as configurations wherein radiant energysource 310 is remote from die 210 and radiant energy is directed to backside 205 of die 210 by element 340, which may comprise light pipes,lenses, mirrors, optical fibers, electromagnetic fields, etc.

Radiant energy source 310 provides radiant energy to back side 205 ofdie 210 in a manner which allows for rapid heating of semiconductor die210 without concomitant rapid heating of next level package 220. Radiantenergy may be directed at all of back side 205, or at only a portion ofback side 205. It is not necessary that radiant energy source 310 becapable of irradiating interconnects 230 directly. In someimplementations, radiant energy source 310 will irradiate some or all ofback side 205 of die 210, without substantially irradiating surface 330of next level package 220, such as by providing a beam which is smallerthan or equal to the size of die 210 and which does not irradiatesurface 330. This may be achieved, for example, by directing a laserbeam having a diameter of 5 millimeters at the center of back side 205of a die 210 having dimensions of 10 millimeters by 10 millimeters.

Control element 340 may be provided to limit radiant energy to back side205 of die 210, substantially preventing radiant energy from impingingon surface 330 of next level package 220. It may be desirable to treatsurface 330 of next level package 220 so as to reduce the heating effectof radiant energy impinging thereon. For example, surface 330 may betreated by applying a coating or cover which prevents radiant energyfrom heating next level package 220.

If die 210 is constructed in a manner that causes radiant energy toreflect from it, it may be desirable to enhance the ability of radiantenergy source 310 to heat die 210 by treating back side 205 of die 210.Suitable treatments may include applying a susceptor material (notshown) to back side 205. For example, if die 210 has a gold layer onback side 205, it may be desirable to coat back side 205 with a ceramicmaterial that absorbs radiant energy and is heated by it. Such atreatment may improve the ability of radiant energy source 310 to heatdie 210.

In Block 530 of FIG. 5, radiant energy source 310 irradiates back side205 of semiconductor die 210 so as to rapidly heat it and bond it tonext level package 220. Radiant energy based rapid heating of die 210may result in heat transfer to interconnect 230 solder joints thatraises their temperature to their reflow temperature without raising thetemperature of the whole next level package 220 to that temperature.

Energy delivered by radiant energy source 310 to back side 205 ofsemiconductor die 210 may result in heat transfer from die 210 tointerconnects 230 and to next level package 220, raising theirtemperatures. The rate of heat transfer depends, in part, on theintensity of the radiant energy provided by source 310. Preferably, therate of heat transfer will be maximized by providing radiant energyintense enough to rapidly bring interconnect 230 solder joints to theirreflow temperature, yet no so intense that die 210 is heated too much,since excessive temperatures may damage die 210. Preferably, radiantenergy source 310 delivers radiant energy to back side 205 ofsemiconductor die 210 quickly enough to ensure heating die 210 andinterconnect 230 solder joints while avoiding excessive heat transfer tonext level package 220. Excessive heat transfer to next level package220 may raise the temperature of next level package 220 to the pointthat, upon cooling, residual stresses may cause defects such as crackingin interlayer dielectric layers of die-interconnect combination 320. Insome implementations, radiant energy may be delivered to back side 205for about 1 second, or less. In some implementations, die 210 may beheated at about 200 degrees centigrade per second.

Die 210 may absorb radiant energy from source 310, so that radiantenergy applied to back side 205 of die 210 may heat die 210. As die 210is heated, it may, in turn, transfer heat to interconnects 230, such asby convection or conduction. Radiant energy applied to back side 205 ofdie 210 may be in the form of, for example, a beam having a diametersignificantly larger than that of an individual interconnect 230. Whereradiant energy is applied to back side 205 in such a way that itimpinges on only a subsection of back side 205, for example where alaser beam having a 5 mm diameter irradiates part of a 10 mm×10 mm die210, convection or conduction within die 210 may serve to raise thetemperature of non-irradiated parts of die 210. Heat transferred fromdie 210 to interconnects 230 may then raise their temperature to theirsolder joint reflow point in order to form bonds with next level package220. Thus, interconnects 230 may be heated to their solder joint reflowtemperature without irradiating all of back side 205 of die 210 andwithout irradiating interconnects 230 directly. In contrast to typicallaser-based heating systems, this may allow for bonding ofdie-interconnect combinations 320 in which interconnects 230 areinaccessible or are otherwise obscured by die 210 or other componentsmounted on next level package 220.

Implementations described herein may require attention to the intensityof radiant energy source 310, the reflow temperature of the interconnect230 solder joints, and the maximum temperature die 210 should sustain.The choice and application of a radiant energy source 310 for bonding agiven die-interconnect combination 320 with a next level package 220 mayalso require attention to a variety of other factors such as duration ofheating, reflectivity of back side 205 of die 210, effects ofsusceptors, if any, applied to back side 205, the rate of heating of die210 and interconnects 230, rate of heating of next level package 220,heat loss to the ambient environment, and heat gradients across die 210and/or interconnects 230, among others. The effects of these factors ona given implementation may be modeled using finite element analyses,also known as the finite element method.

Finite element method modeling is most effective when the model closelymatches the real structure. Since methods and systems described hereinare applicable to a large variety of possible structures, those skilledin the art will appreciate that the general guidelines for finiteelement method provided herein must be combined with information derivedfrom the actual structures being processed. Thus, this discussion ismerely meant to outline an approach to modeling.

Finite element method thermal and structural modeling may be performedwith the objectives of estimating ideal operating parameters, estimatingthe temperature history and distribution in the system, and examiningthe influences of processing parameters on residual stresses. Modelingmay be performed with a general purpose program such as ABAQUS. Thermaland structural modeling may be performed separately. For example,thermal modeling may be performed first, allowing use of the results ofthat modeling in setting boundary conditions for the structuralmodeling.

Model elements for thermal modeling may include, for example, models ofsemiconductor die 210, interconnect 230 features such as copper bumpsand solder balls, and models of next level package 220. Each may bemodeled as two-dimensional heat transfer elements. The boundarycondition for energy input from radiant energy source 310 may be modeledas a spatially uniform transient heat flux applied over back side 205 ofdie 210. Boundary conditions for ambient convection may includeconvection along edges of die 210, edges of next level package 220, thesurface of next level package 220 opposite surface 330, and any portionof surface 330 facing die 210 but not covered by it. In some instances,it may also be desirable to model convection at surface 330 in the space410 between multiple dies 210.

For structural modeling, it is preferable to employ a global-localapproach, in which the global model uses elements from the thermalmodeling (e.g., models of die 210, copper bumps and solder balls ofinterconnects 230, and next level package 220). The local model may be amore detailed examination of the smaller elements making up theoutermost interconnects 230 on die 210.

For example, the local model may model a subset of interconnects 230,such as three outer interconnect joints, since these interconnect jointsmay be where defects are most likely to arise. Thus, where modeling asemiconductor die-interconnect combination 320 comprising a fragilelow-k interlayer dielectric such as ILD 120, a detailed examination ofthe outermost interconnects is preferably performed to estimate stresseson ILD 120 in those areas. Smaller elements of the local model maysimilarly include other elements, for example various layers ofinterconnect stack 100 and other dielectric layers, traces, orinterconnects at front side 206 of semiconductor die 210. The materialproperties assigned to components of the system to be modeled arepreferably measured experimentally.

Finite element method modeling may be refined by performing one or moreexperiments to compare aspects of modeling with actual results. Thus, itmay be preferable to conduct experiments which correlate the actual heatflux through semiconductor die 210 with modeled results. As an example,it may be preferable to measure the temperature at the front side 206 ofdie 210 while heating die 210 with radiant energy supplied by source310. Convection coefficients employed in the thermal modeling may thenbe adjusted so as to match observed experimental results.

Finite element method modeling may be used to estimate the radiantenergy input required to achieve rapid heating of die 210 and to achievesolder reflow of all interconnect 230 solder joints. For a given radiantenergy pulse duration from source 310, modeling may provide informationcomparing radiant energy input to back side 205 of die 210 with themaximum temperature of die 210 and with the minimum temperatures at thechosen subset of interconnects 230, for example the outermostinterconnects. These maximum and minimum temperatures may result in anestimate of the upper and lower operational limits for energy input toback side 205 of die 210. Thus, initial operating conditions for radiantenergy based heat input may be set between these upper and lower limits.

Finite element method modeling may also be employed to estimate residualstresses in a die-next level package assembly after chip attach andcooling. For example, modeling may be employed to estimate thedifference in contraction (δ) of model 200. This may allow for acorrelation between the modeled operating conditions and the expectedresidual stresses, and may thus enable predictions about the effects ofoperating conditions on the potential occurrence of defects such ascracking in ILD 120 at a subset of interconnects 230, such as a set ofoutermost interconnects.

Empirical analysis of die-next level package assemblies produced throughradiant energy heating may be used to confirm predictions made by finiteelement modeling and also may be used to further tailor methods andsystems described herein to more particularly suit the actual dies 210and next level packages 220 that are to be bonded. For example, die 210warpage measurements are indicative of the existence and magnitude ofresidual stresses in the assemblies and of the potential occurrence ofdefects such as cracking of ILD layers 120 at outermost interconnects230. Die 210 warpage measurements may be made, for example, with aFizeau interferometer.

Visual examination of cross sections through actual bonded die-nextlevel package assemblies and electrical measurements on interconnects230, test loops, or similar structures may likewise be employed toverify electrical continuity of die-next level package connections,particularly those at outer edges of the assemblies. These measurementscan be used to confirm that heating at the outer edges was adequate toreflow the interconnect 230 solder joints there.

The foregoing detailed description and accompanying drawings are onlyillustrative and not restrictive. They have been provided primarily fora clear and comprehensive understanding of the disclosed implementationsand no unnecessary limitations are to be understood therefrom. Numerousadditions, deletions, and/or modifications to the implementationsdescribed herein, as well as alternative arrangements, may be devised bythose skilled in the art without departing from the spirit of thedisclosed implementations and the scope of the appended claims.

1. A method for chip attach, comprising: providing a chip having a frontside and a back side and having interconnects formed at the front side;positioning the chip on a surface of a next level package such that thefront side of the chip faces the surface of the next level package;providing a source of radiant energy towards the backside of said chip;and providing a control element between said source of radiant energyand said back side of said chip in a path of the radiant energy whichsubstantially prevents irradiation of the surface of the next levelpackage; irradiating the chip to preferentially heat the chip over thenext level package; wherein heating the chip heats the interconnects toan interconnect reflow temperature.
 2. The method of claim 1, whereinheating the interconnects to the interconnect reflow temperature couplesthe chip to the next level package.
 3. The method of claim 1, whereinthe next level package has an ambient temperature, and furthercomprising maintaining the ambient temperature below the interconnectreflow temperature.
 4. The method of claim 1, wherein the controlelement comprises a mask, lens, or reflector.
 5. The method of claim 1,wherein the source of radiant energy emits radiant energy having a crosssection greater than a cross section of the chip, and wherein thecontrol element reduces the cross section of the radiant energy to besmaller than the cross section of the chip.
 6. The method of claim 1,wherein the chip is irradiated for from about 0.01 seconds to about 60seconds.
 7. A method for bonding a semiconductor die to a substrate,comprising: providing a semiconductor die having a front side and a backside; arranging the semiconductor die with the substrate such that thefront side of the semiconductor die faces a surface of the substrate andthe surface of the substrate extends laterally beyond an edge of thesemiconductor die; providing a source of radiant energy; providing acontrol element in a path of the radiant energy wherein the controlelement substantially prevents radiant energy from irradiating thesurface of the substrate extending laterally beyond the edge of thesemiconductor die; providing radiant energy to the back side of thesemiconductor die; and coupling the semiconductor die to the substrate.8. The method of claim 7, wherein coupling the semiconductor die to thesubstrate comprises heating the semiconductor die with the radiantenergy.
 9. The method of claim 8, wherein the semiconductor die hasinterconnects formed at the front side and wherein heating thesemiconductor die with the radiant energy raises the temperature of theinterconnects to an interconnect reflow temperature.
 10. The method ofclaim 7, wherein the control element is a mask.
 11. The method of claim10, further comprising arranging a second semiconductor die with thesubstrate and irradiating two semiconductor dies substantiallysimultaneously.